EPIDExtreme Power & Integrated Devices Laboratory
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UNIST|Graduate School of Semiconductor Materials and Devices Engineering

Powering extremesIntegrating intelligence

01Ultra-wide bandgap semiconductors (UWBGs)Gallium oxide · Epitaxy · Defect control↗02Extreme & power electronicsVertical devices · Power conversion · Harsh environments↗03Advanced memory devicesFerroelectric memory · FTJ · FeFET · Electrochemical RRAM↗
Technical illustration of atomic lattice, semiconductor epitaxy, wafer, and vertical power devices
FIG. 01Atomic-scale materials, crystalline growth, and vertical device architecture

Research

Materials to systems, built for the limits

EPID connects semiconductor materials, device physics, fabrication, reliability, and intelligent integration.

01

UWBGs

Ultra-wide bandgap semiconductors

From epitaxy and interface control to vertical Ga₂O₃ power devices, we engineer materials beyond the limits of silicon.

Explore direction ↗
02

Extreme systems

Extreme & power electronics

High-voltage devices, thermal management, radiation resilience, and reliable operation across extreme temperatures.

Explore direction ↗
03

Integrated intelligence

Advanced memory devices

Ferroelectric, memristive, and neuromorphic devices that connect power, sensing, memory, and intelligent computation.

Explore direction ↗

Publications

Discoveries that move power electronics forward

01Journals↗02Patents↗03Conferences↗

People

Meet the Team

Meet the Team ↗

News

Latest from EPID

EPID Laboratory begins a new chapter at UNIST.

Building an integrated research platform from UWBG materials to extreme power systems.

Ga₂O₃ power devices for the post-silicon era.

High-voltage device architectures, heterojunctions, thermal pathways, and reliability.

Join Us

We welcome motivated students and researchers interested in semiconductor materials, power devices, extreme electronics, and advanced memory.

Contact EPID · ysrim@unist.ac.kr ↗