Laboratory system
MIST CVD
- Sequential mist generation
- Process temperature up to 1,000 °C
- Ga₂O₃, Al₂O₃, IrO₂, and other oxide materials
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Facilities & Equipment
Tools for growthEvidence for devices
EPID integrates materials synthesis, device fabrication, and multimodal characterization in one experimental workflow.
17 instruments and systemsCategory 01
Growth & deposition
Thin-film growth, epitaxy, metallization, and controlled thermal processing.
Laboratory system
MIST CVD — 2nd system
- Sequential mist generation
- Process temperature up to 1,000 °C
- 4-inch wafer capability
- Ga₂O₃, Al₂O₃, IrO₂, and other oxide materials
Laboratory system
Thermal / plasma-enhanced ALD
- Al₂O₃ uniformity ±1% on a 200 × 200 mm² substrate
- Base pressure below 5.0 × 10⁻³ Torr
- Al₂O₃, ZrO₂, HfO₂, and HfZrOₓ
Laboratory system
RF/DC co-sputtering system
- Load-lock configuration
- Substrate heating to 400 °C; 500 °C maximum
- RF and DC gun power supplies
- Base pressure 5.0 × 10⁻⁶ Torr
FTS
Facing-target sputtering system
- DC source
- Base pressure 1 × 10⁻⁶ Torr
- 2-inch Ti, Mo, W, Ag, ITO, and IGZO targets
Laboratory system
E-beam / thermal evaporator
- One thermal boat and three e-beam crucibles
- Base pressure 1 × 10⁻⁶ Torr
- Substrate heating to 650 °C
- Pt, Au, Ag, Ti, Al, and Cr
RTA
Rapid thermal annealing system
- Room temperature to 1,000 °C
- Temperature uniformity within ±1%
- Vacuum, Ar, O₂, and N₂ ambient
- Ultimate pressure below 5 × 10⁻³ Torr
Category 02
Device fabrication & processing
Surface preparation, chemical processing, and controlled sample handling.
Laboratory system
Wet station
- Spin coater
- Hot plate
- Chemical drain
Laboratory system
Plasma cleaner
- Surface cleaning and activation before deposition or bonding
Laboratory system
UV/ozone treatment system
- 185 and 254 nm wavelengths
- Up to 8-inch wafers
Category 03
Electrical characterization
DC, pulsed, capacitance, transport, and semiconductor parameter measurements.
Keithley 4200A-SCS
Semiconductor parameter analyzer
- DC I–V: 0.2 µV–210 V and 10 aA–1 A
- C–V: 1 kHz–10 MHz with ±30 V DC bias
- Pulsed I–V: ±40 V, ±800 mA, 200 MSa/s
Keithley 2635B
Source measure unit
- 200 mV–200 V
- 1 nA–1.5 A
- Pulse width from 200 µs
Laboratory system
High-voltage source meter
- Voltage to 1,100 V
- Current to 1.00 A
- 6.5-digit resolution
Tektronix AFG31022
Arbitrary function generator
- −5 V to 5 V DC
- 1 mHz–20 MHz pulse frequency
- 16 ns–999.99 s pulse width
- Two channels
Laboratory system
Probe station
- I–V and C–V measurement
- Hot chuck from room temperature to 300 °C
- Four manipulators
Category 04
Optical characterization
Absorption spectroscopy and calibrated optical-power measurements.
Laboratory system
UV–visible spectrophotometer
- 190–1,100 nm wavelength range
- 1 nm slit width
- Photometric noise below 0.0002 A
Newport 843-R
Optical power meter
- Handheld laser power meter
- Measurement from pJ and pW to kilowatt-class optical power
Research access
Build, measure, and understand
For research collaboration or facility-related questions, contact EPID Laboratory.
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